Intelligent Diode Structures

ABSTRACT

The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit of U.S. Provisional PatentAppl. No. 62/586,714, filed Nov. 15, 2017, which is incorporated hereinby reference in its entirety.

BACKGROUND

Electrostatic discharge (ESD) represents an instantaneous, or nearinstantaneous, flow of electricity between electrically charged objects.Often times, charge accumulates in one object, such as a human hand toprovide an example, through electrostatic induction. A electrostaticdischarge event occurs once this object is placed sufficiently proximateto another, lesser charged object, such as an electronic device toprovide an example, causing the flow of electricity between theseobjects, often resulting in a visible spark. This flow of electricitycan overwhelm the electronic device causing failure. In some situations,less dramatic forms of this discharge may be neither seen nor heard, yetstill be large enough to cause damage to the electronic device.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a block diagram of exemplary electrostatic dischargeprotection circuitry according to an exemplary embodiment of the presentdisclosure;

FIG. 2 illustrates a cross-sectional view of an exemplary intelligentn-diode according to an exemplary embodiment of the present disclosure;

FIG. 3 illustrates a cross-sectional view of an integrated circuithaving an exemplary embodiment of the exemplary intelligent n-diodeaccording to an exemplary embodiment of the present disclosure;

FIG. 4 illustrates a cross-sectional view of an exemplary intelligentp-diode according to an exemplary embodiment of the present disclosure;

FIG. 5 illustrates a cross-sectional view of an integrated circuithaving an exemplary embodiment of the exemplary intelligent p-diodeaccording to an exemplary embodiment of the present disclosure;

FIG. 6 illustrates a cross-sectional view of a first exemplaryintelligent dual diode according to an exemplary embodiment of thepresent disclosure;

FIG. 7 illustrates a first cross-sectional view of an integrated circuithaving an exemplary embodiment of the first exemplary intelligent dualdiode according to an exemplary embodiment of the present disclosure;

FIG. 8 illustrates a second cross-sectional view of an integratedcircuit having an exemplary embodiment of the first exemplaryintelligent dual diode according to an exemplary embodiment of thepresent disclosure; and

FIG. 9 illustrates a cross-sectional view of a second exemplaryintelligent dual diode according to an exemplary embodiment of thepresent disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to he limiting. For example, the formationof a first feature over a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is, does not in itselfdictate a relationship between the various embodiments and/orconfigurations described.

Overview

The present disclosure describes exemplary configurations andarrangements for various intelligent diodes. The intelligent diodes ofthe present disclosure can be implemented as part of electrostaticdischarge protection circuitry to protect other electronic circuitryfrom the flow of electricity caused by electrostatic discharge events.The electrostatic discharge protection circuitry dissipates one or moreunwanted transient signals which result from the electrostatic dischargeevent. In some situations, some carrier electrons and/or carrier holescan flow from intelligent diodes of the present disclosure into asemiconductor substrate. The exemplary configurations and arrangementsdescribed herein include various regions designed collect these carrierelectrons and/or carrier holes to reduce the likelihood these carrierelectrons and/or carrier holes cause latch-up of the other electroniccircuitry.

Exemplary Electrostatic Discharge Protection Circuitry

FIG. 1 illustrates a block diagram of exemplary electrostatic dischargeprotection circuitry according to an exemplary embodiment of the presentdisclosure. In the exemplary embodiment illustrated in FIG. 1, anintegrated circuit 100 includes electrostatic discharge protectioncircuitry to dissipate one or more unwanted transient signals 150flowing through the integrated circuit 100 caused by an electrostaticdischarge event 152. In an exemplary embodiment, the integrated circuit100 can be fabricated onto a semiconductor substrate using asemiconductor fabrication technique, referred to as being “on-chip.” Inthis exemplary embodiment, the integrated circuit 100 is situated withinone or more diffusion layers, one or more polysilicon layers, and/or oneor more metal layers of a semiconductor layer stack. In this exemplaryembodiment, the one or more diffusion layers, the one or morepolysilicon layers, and/or the one or more metal layers of thesemiconductor layer stack are situated within or onto a semiconductorsubstrate of the semiconductor layer stack. The semiconductor substratecan include a semiconductor material, such as a silicon crystal, but caninclude other materials, or combinations of materials, such as sapphireor any other suitable material that will be apparent to those skilled inthe relevant ants) without departing from the spirit and scope of thepresent disclosure. Also, in this exemplary embodiment, the one or moremetal layers of the semiconductor stack can include one or moreconductive materials such as tungsten (W), aluminum (Al), copper (Cu),gold (Au), silver (Ag), or platinum (Pt) to provide some examples,interdigitated with one or more non-conductive materials, such assilicon dioxide (SiO₂), spin-on-glass, silicon nitride (Si₃N₄), siliconcarbide (SiC), silicon carbon. nitride, silicon ox nitride (Si₂N₂O),and/or fluorine-doped silicate glass (FSG) to provide some examples. Asillustrated in FIG. 1, the integrated circuit 100 includes electroniccircuitry 102, an input/output (I/O) pad 104, and electrostaticdischarge protection circuitry 106.

The electronic circuitry 102 can include one or more analog circuits,one or more digital circuits, and/or one or more mixed-signal circuits.The one or more analog circuits operate on one or more analog signalsthat continuously vary in time. The one or more analog circuits caninclude one or more current sources, one or more current mirrors, oneor, more amplifiers, one or inure bandgap references, and/or othersuitable analog circuits that will be apparent to those skilled in therelevant art(s) without departing from the spirit and scope of thepresent disclosure. The one or more digital circuits operate on one ormore digital signals having one or more discrete levels. The one or moredigital circuits can include one or more logic gates, such as logicalAND gates, logical OR gates, logical XOR gates, logical XNOR gates, orlogical NOT gates to provide some examples, and/or other suitabledigital circuits that will be apparent to those skilled in the relevantart(s) without departing from the spirit and scope of the presentdisclosure. The one or more mixed-signal circuits represent acombination of the one or more analog circuits and the one or moredigital circuits.

The I/O pad 104 can represent an interconnection between the electroniccircuitry 102 and one or more other electrical, mechanical, and/orelectro-mechanical circuits communicatively coupled to the integratedcircuit 100. This interconnection communicates one or more signals, suchas one or more information signals, one or more power signals, one ormore clocking signals to provide some examples, between the electroniccircuitry 102 and the one or more other electrical, mechanical, and/orelectro-mechanical circuits. In an exemplary embodiment, the I/O pad 104represents one or more regions of the one or more conductive materialswithin the one or more metal layers of the semiconductor stack. Asillustrated in FIG. 1, the electrostatic discharge event 152 can occurbetween the I/O pad 104 and one or more electrically charged Objectssufficiently proximate to the integrated circuit 100. Generally, theelectrostatic discharge event 152 can represent an instantaneous, ornear instantaneous, flow of electricity between the one or moreelectrically charged objects and the I/O pad 104 resulting, from adifference in electrical potential between the one or more electricallycharged objects and the I/O pad 104. The electrostatic discharge event152 occurs when the one or more electrically charged objects and the I/Opad 104 are placed sufficiently proximate to each other causing the flowof electricity between the one, or more electrically charged objects andthe I/O pad 104, often resulting in a visible spark. The flow ofelectricity can be from the one or more electrically charged objects tothe I/O pad 104 when the electrical potential of the one or moreelectrically charged objects is greater than the electrical potential ofthe I/O pad 104 or to the one or more electrically charged objects fromthe I/O pad 104 when the electrical potential of the one or moreelectrically charged objects is less than the electrical potential ofthe I/O pad 104.

The electrostatic discharge protection circuitry 106 dissipates the oneor more unwanted transient signals 150 traversing between the electroniccircuitry 102 and the I/O pad 104 which result from the electrostaticdischarge event 152. The one or more unwanted transient signals 150 cancause one or more signals at circuitry node 154 to have sufficientenergy to breakdown various semiconductor devices within the electroniccircuitry 102 which can cause permanent damage. Examples of breakdowncan include punch-through breakdown, avalanche breakdown, and gate oxidebreakdown to provide some examples. For example, the one or moreunwanted transient signals 150 traversing between the electroniccircuitry 102 and the I/O pad 104 can constructively interfere with oneor more desired signals traversing between the electronic circuitry 102and the I/O pad 104. In this example, this constructively interferencecan increase various voltages of the one or more desired signals at thecircuitry node 154 to raise above a first supply voltage, such as apositive supply voltage V_(DD) as illustrated in FIG. 1, or to fallbelow a second supply voltage, such as a negative supply voltage V_(SS)as illustrated in FIG. 1.

In the exemplary embodiment illustrated in FIG. 1. the electrostaticdischarge protection circuitry 106 includes an intelligent n-diode 108and an intelligent p-diode 110 to dissipate the one or more unwantedtransient signals 150 resulting from the electrostatic discharge event152. In the exemplary embodiment, illustrated its FIG. 1, theintelligent n-diode 108 and the intelligent p-diode 110 are reversedbiased under normal operation conditions, for example, preceding and/orsubsequent to the electrostatic discharge event 152. However, during theelectrostatic discharge event 152, the intelligent n-diode 108 and/orthe intelligent p-diode 110 can become forward bias to dissipate the oneor more unwanted transient signals 150 traversing between the electroniccircuitry 102 and the I/O pad 104. For example, the intelligent n-diode108 becomes forward biased when the one or more unwanted transientsignals 150 cause the voltage at the circuitry node 154 to fall below henegative supply voltage In this example, the intelligent n-diode 108dissipates the one or more unwanted transient signals 150 to increasethe voltage at the circuitry node 154 to be greater than the negativesupply voltage As another example, the intelligent p-diode 110 becomesforward biased when the one or more unwanted transient signals 150 causethe voltage at the circuitry node 154 to raise above the positive supplyvoltage V_(DD). In this other example, the intelligent p-diode 110dissipates the one or more unwanted transient signals 150 to decreasethe voltage at the circuitry node 154 to be less than the positivesupply voltage V_(DD1).

As discussed above, the electrostatic discharge protection circuitry 106can be situated within or onto the semiconductor substrate of thesemiconductor layer stack. As illustrated in FIG. 1, some carrierelectrons 156 and/or some carrier holes 158 from among the one or moreunwanted transient signals 150 flow from the intelligent n-diode 108 andthe intelligent p-diode 110, respectively, to the semiconductorsubstrate as the intelligent n-diode 108 and the intelligent p-diode 110dissipate the one or more unwanted transient signals 150. In thesesituations, the carrier electrons 156 and or the carrier holes 158 canbe of sufficient quantity to activate one or more parasitic structureswithin the electronic circuitry 102 causing latch-up. The one or moreparasitic structures within the electronic circuitry 102 can berepresented as a silicon controlled rectifier (SCR) within thesemiconductor substrate of the electronic circuitry 102. The SCR forms ashort circuit, or other low impedance pathway, between a second positivesupply voltage V_(DD2) of the electronic circuitry 102 and the negativesupply voltage V_(ss) when a sufficient number of the carrier electrons156 and/or the carrier holes 158 are available within the semiconductorsubstrate of the electronic circuitry 102. The short circuit, or theother low impedance pathway, disrupts proper functioning of theelectronic circuitry 102 causing the latch-up. Various exemplaryembodiments for the intelligent n-diode 108 and/or the intelligentp-diode 110 are to be described in further detail below whicheffectively reduce the quantity of the carrier electrons 156 and/or thecarrier holes 158 available within the semiconductor substrate of theelectronic circuitry 102 to reduce the likelihood of activating the oneor more parasitic structures within the semiconductor substrate of theelectronic circuitry 102, namely, the latch-up of the electroniccircuitry 102.

Exemplary Intelligent N-Diode

FIG. 2 illustrates a cross-sectional view of an exemplary intelligentn-diode according to an exemplary embodiment of the present disclosure.An intelligent n-diode 200 can be situated within or onto thesemiconductor substrate of a semiconductor layer stack in asubstantially similar manner as the intelligent n-diode 108 as describedabove in FIG. 1. The intelligent n-diode 200 effectively reduces thequantity of carrier electrons available within a semiconductor substrate202 to reduce the likelihood of activating one or more parasiticstructures within other electrical, mechanical. and/orelectro-mechanical circuitry, such as the electronic circuitry 102,within the semiconductor substrate 202, This reduction in the quantityof carrier electrons within the semiconductor substrate 202 similarlyreduces the potential for latch-up of the other electrical, mechanical,and/or electro-mechanical circuitry. As illustrated in FIG. 2, theintelligent n-diode 200 includes n-well strap regions 204.1 through204.m and diode finger regions 206.1 through 206.i. The intelligentn-diode 200 can be used to implement the intelligent n-diode 108 asdescribed above.

As illustrated in FIG. 2, the n-well strap regions 204.1 through 204.mand the diode finger regions 206.1 through 206.i include n+ regions(shown using vertical lines in FIG. 2), p+ regions (shown usinghorizontal lines in FIG. 2), n-well regions (shown using a dottedshading in FIG. 2), p-well regions (shown a partial diagonal shading inFIG. 2), short trench isolation (STI) regions (shown a gray shading inFIG. 2), and silicide regions (shown using white shading in FIG. 2)situated within or onto the semiconductor substrate 202. In theexemplary embodiment illustrated in FIG. 2, the n-well strap regions204.1 through 204.m are interdigitated with the diode finger regions206.1 through 206.i to form the intelligent n-diode 200. in theexemplary embodiment illustrated in FIG. 2, the n-well strap regions204.1 through 204.m are substantially similar to one another and thediode finger regions 206.1 through 206.1 are substantially similar toone another; therefore, only the n-well strap region 204.1 from amongthe n-well strap regions 204.1 through 204.m and the diode finger region206.1 from among the diode finger regions 206.1 through 206.1 aredescribed in further detail below. For ease of description, the shading,of the various regions of the n-well strap region 204.1 and the diode.linger region 206.1, as described above, are not illustrated in theexploded views of then-well strap region 204.1 and the diode fingerregion 206.1. As illustrated in FIG. 2, the n-well strap region 204.1includes n-type electron absorption regions 208.1 through 208.k situatedin an n-well region 210. And the diode finger region 206.1 includes ap-type diode finger region 220, a first n-type diode finger region 222.1and a second n-type diode finger region 222.2 situated in a p-wellregion 234.

The n-well region 210 represents an implanted n-type region within thesemiconductor substrate 202 that includes one, or more n-type materials.In an exemplary embodiment, the one or more n-type materials can includeimpurity atoms of a donor type, such as phosphorus (P), arsenic (As),antimony (Sb). or any other suitable element, compound, or mixture thatis capable of donating electrons that will bee, apparent to thoseskilled in the relevant art(s) without departing from the spirit andscope of the present disclosure. Similarly, the p-well region 234represents an implanted p-type region within the semiconductor substrate202 that includes one or more p-type materials. In an exemplaryembodiment, the one or more p-type materials include impurity atoms ofan acceptor type, such as boron (B), aluminum (Al), (Ga) or any othersuitable element, compound, or mixture that is capable of acceptingelectrons that will be apparent, to those skilled in the relevant art(s)without departing from the spirit and scope of the present disclosure.

In the exemplary embodiment illustrated in FIG. 2, the n-type electronabsorption regions 208.1 through 208.k, the first n-type diode fingerregion 222.1, and the second n-type diode finger region 222.2 includen-type regions 212.1 through 212.k, a first n-type region 226.1, and asecond n-type region 226,2, respectively. Although the n-type regions212.1 through 212.k, the p-type region 224, the first n-type region226.1 and the second n-type region 226.2 are illustrated as being inshapes of rectangles in FIG. 2, this is for illustrative purposes only.Those skilled in the relevant art(s) will recognize that other shapes,for example having, one or more linear segments and/or curved segments,are possible without departing from the spirit and scope of the presentdisclosure. The n-type regions 212.1 through 212.k, the first n-typeregion 226.1 and the second n-type region 226.2 represent variousregions within the intelligent n-diode 200 which include the n-typematerial. In an exemplary embodiment, the n-type regions 212.1 through212.k, the first n-type region b 226.1 and the second n-type region226.2 include a heavy concentration of the n-type material, for example,approximately

${\frac{1 \times 10^{19}}{{cm}^{3}}\mspace{14mu} {to}\mspace{14mu} \frac{5 \times 10^{20}}{{cm}^{3}}},$

to form N+ regions. In this exemplary embodiment, the “+” indicates then-type regions 212.1 through 212.k, the first n-type region 226.1 andthe second n-type region 226.2 include higher earner concentrations thanregions not designated by a “+” such as the n-well region 210 to providean example. In this exemplary embodiment, for example, the “+” indicatesn-type regions 212.1 through 212.k, the first n-type region 226.1 andthe second n-type region 226.2 generally have a greater number of excesscarrier electrons than the n-well region 210. In contrast, the p-typediode finger region 220 includes a p-type region 224. The p-region 224represents a region within the intelligent n-diode 200 which includesthe p-type material. In an exemplary embodiment, the p-type region 224includes a heavy concentration of the p-type material, for example,approximately

${\frac{1 \times 10^{19}}{{cm}^{3}}\mspace{14mu} {to}\mspace{14mu} \frac{5 \times 10^{20}}{{cm}^{3}}},$

to form a P+ region. In this exemplary embodiment, the “+” indicates thep-type region 224 includes higher carrier concentrations than regionsnot designated by a “+,” such as the p-well region 234 to provide anexample. For example, the p-type region 224 generally has a greaternumber of excess carrier holes than the p-well region 234. In theexemplary embodiment illustrated in FIG. 2, the first n-type region226.1 and the second n-type region 226.2 form a cathode region of theintelligent n-diode 200 and the p-type region 224 forms an anode regionof the intelligent n-diode 200.

As to be described in further detail below in FIG. 3, the n-type regions212.1 through 212.k effectively reduce the quantity of carrierelectrons, such as the carrier electrons 156 to provide an example,available within the semiconductor substrate 202 to reduce thelikelihood of activating one or more parasitic structures within theother electrical, mechanical, and/or electro-mechanical circuitrycoupled to the intelligent n-diode 200, such as the electronic circuitry102 to provide an example. This reduction in the quantity of carrierelectrons within the semiconductor substrate 202 similarly reduces thepotential for latch-up of the other electrical, mechanical, and/orelectro-mechanical circuitry.

In the exemplary embodiment illustrated in FIG. 2, the n-type electronabsorption regions 208.1 through 208.k, also include first STI regions214.1 through 214.k and second STI regions 216.1 through 216.k.Similarly, the p-type diode finger region 220, the first n-type diodefinger region 222.1, and the second n-type diode finger region 222.2include first 511 regions 228.1 through 228.3 and second STI regions230.1 through 230.3. In an exemplary embodiment, the first STI regions214.1 through 214.k, the second STI regions 216.1 through 216.k, thefirst STI regions 228.1 through 228.3 and the second STI regions 230.1through 230.3 can include one or more dielectric materials. such assilicon dioxide (SiO₂) to provide an example, though any suitabledielectric material may he used that will be apparent to those skilledin the relevant art(s) without departing from the spirit and scope ofthe present disclosure. Although the first STI regions 214.1 through214.k the second STI regions 216.1 through 216.k, the first STI regions228.1 through 228.3, and the second STI regions 230.1 Through 230.3 areillustrated as being in shapes of rectangles in FIG. 2, this is forillustrative purposes only. Those skilled in the relevant art(s) willrecognize that other shapes, for example having one or more linearsegments and or curved segments, are possible without departing from thespirit and scope of the present disclosure.

In the exemplary embodiment illustrated in FIG. 2, the n-type electronabsorption regions 208.1 through 208.k further include silicide regions218.1 through 218.k. Similarly, the p-type diode finger region 220, thefirst n-type diode finger region 222.1, and the second n-type diodefinger region 222.2 include suicide regions 232.1 through 232.3. In anexemplary embodiment, the silicide regions 218.1 through 218.k and thesilicide regions 232.1 through 232.3 include one or more alloys of metaland silicon, such as nickel silicide (NiSi) sodium silicide (Na₂Si),magnesium silicide (Mg₂Si), platinum silicide (PtSi) titanium silicide(TiSi₂), tungsten silicide (WSi₂), or molybdenum disilicide (MoSi₂) toprovide some examples, though any suitable dielectric material may beused that will be apparent to those skilled in the relevant art(s)without departing from the spirit and scope of the present disclosure.Although the silicide regions 218.1 through 218.k and the silicideregions 232.1 through 232.3 are illustrated as being in shapes ofrectangles in FIG. 2. this is for illustrative purposes only. Thoseskilled in the relevant art(s) will recognize that other shapes, forexample having one or more linear segments and/or curved segments, arepossible without departing from the spirit and scope of the presentdisclosure.

Exemplary Operation Of The Exemplary Intelligent N-Diode

FIG. 3 illustrates a cross-sectional view of an integrated circuithaving an exemplary embodiment of the exemplary intelligent n-diodeaccording to an exemplary embodiment of the present disclosure. Anintegrated circuit 300 can be situated within or onto the semiconductorsubstrate of a semiconductor layer stack in a substantially similarmanner as the integrated circuit 100 as described above in FIG. 1. Inthe exemplary embodiment illustrated in FIG. 3. the integrated circuit300 includes an intelligent n-diode 302 to effectively reduce thequantity of the carrier electrons 156 available within the semiconductorsubstrate 202 to reduce the likelihood of activating one or moreparasitic structures within electronic circuitry 304 within thesemiconductor substrate. This reduction in the quantity of carrierelectrons within the semiconductor substrate 202 similarly reduces thepotential for latch-up of the electronic circuitry 304.

As illustrated in FIG. 3. the intelligent n-diode 302 includes n-wellstrap regions 306.1 and 306.2 and a diode linger region 308. Theintelligent n-diode 302 can represent an exemplary embodiment ofintelligent n-diode 200. As such, the n-well strap regions 306.1 and306.2 can represent exemplary embodiments of two n-well strap regionsfrom among the n-well strap regions 204.1 through 204.m and the diodefinger region 308 can represent an exemplary embodiment of a diodefinger region from among the diode finger regions 206.1 through 206.1.As to he described below, the n-well strap regions 306.1 and 306.2include the n-type electron absorption regions 208.1 through 208.ksituated in the n-well region 210 as described above in FIG. 2. And, thediode finger region 308 includes the p-type diode finger region 220, thefirst n-type diode finger region 222.1 and the second n-type diodefinger region 222.2 situated in the p-well region 214 as described abovein FIG. 2.

In the exemplary embodiment illustrated in FIG. 3, the intelligentn-diode 302 dissipates one or more unwanted transient signals, such asthe one or more unwanted transient signals 150 to provide an example,resulting from an electrostatic discharge event, such as theelectrostatic discharge event 152. Ideally, the carrier electrons 156traverse, from the first n-type region 226.1 and the second n-typeregion b 226.2 of the diode finger region 308 onto the p-type region 224of the diode finger region 308. However, as described above in FIG. 1and FIG. 2, some of the carrier electrons 156 from among the one or moreunwanted transient signals flow from the intelligent n-diode 302 to thesemiconductor substrate 202 as the intelligent n-diode 302 dissipatesthe one or more unwanted transient signals 150. For example, somecarrier electrons from among the carrier electrons 156 traverse from thefirst n-type region. 226.1 and the second n-type region 226.2 of the,diode. finger region 308 of the diode finger region 308 onto theelectronic circuitry 304 and/or the n-well strap regions 306.1 and 306.2as illustrated in FIG. 3. In the exemplary embodiment illustrated inFIG. 3, the carrier electrons 156 traversing from the first n-typeregion 226.1 and the second n-type region 226.2 of the diode fingerregion 308 of the diode finger region 308 onto the electronic circuitry304 and/or the n-well strap regions 306.1 and 306.2 are captured by then-type regions 212.1 through 212.k of the n-well. strap regions 306.1and 306.2. However., in some situations, carrier electrons 310 fromamong the carrier electrons 156 traversing from the first n-type region226.1 and the second n-type region 226.2 of the diode finger region 308are not captured by the n-type regions 212.1 through 212.k of the n-wellstrap regions 306.1 and 306.2 as illustrated in FIG. 3. In thesesituations, the carrier electrons 310 pass onto the electronic circuitry304. The quantity of the carrier electrons 310 passing onto theelectronic circuitry 304 is related to the number of n-type regions fromamong the n-type regions 212.1 through 212.k of the n-well strap regions306.1 and 306.2. For example, more n-type regions from among the n-type,regions 212.1 through 212.k of the n-well strap regions 306.1 and 306.2lead to less carrier electrons 310 passing onto the electronic circuitry304 and less n-type regions from among the n-type regions 212.1 through212.k of the n-well strap regions 306.1 and 306.2 lead t more carrierelectrons 310 passing onto the electronic circuitry 304. In theexemplary embodiment illustrated in FIG. 3, the first n-type region226.1 and the second n-type region 226.2 form a cathode region of theintelligent n-diode 302 and the p-type region 224 forms an anode regionof the intelligent n-diode 302.

In the exemplary embodiment illustrated in FIG. 3, the integratedcircuit 300 includes an STI region 312 situated within a n-well region314 within the semiconductor substrate, to isolate the intelligentn-diode 302 from the electronic circuitry 304. In an exemplaryembodiment, the STI region 312 can include substantially similardielectric materials as the first STI regions 214.1 through 214.k andthe second STI regions 216.1 through 216.k as described above in FIG. 2.In another exemplary embodiment, the n-well region 314 can includesubstantially similar n-type materials as the n-well legion 210 asdescribed above in FIG. 2.

As illustrated in FIG. 3, the electronic circuitry 304 includes ann-type metal oxide semiconductor (NMOS) device 316 and a p-type metaloxide semiconductor (PMOS) device 318 configured to form a logicalinverting circuit. However, this configuration and arrangement of theelectronic circuitry 304 as shown in FIG. 3 is for illustrative purposesonly. Those skilled in the relevant art(s) will recognize otherconfigurations and arrangements for the electronic circuitry 304 arepossible without departing from the spirit and scope of the presentdisclosure. These other configurations and arrangements can includedifferent NMOS and/or PMOS devices than illustrated in FIG. 3. In theexemplary embodiment illustrated in FIG. 3, the NMOS device 316 includesp+ bulk (B) region (shown using horizontal lines in FIG. 3), source (S)and drain (D) regions (shown using vertical lines in FIG. 3), and A gate(G) region (shown using diagonal lines in FIG. 3) within a region (Shownusing the third gray shading, described above in FIG. 2, in FIG. 3).Likewise, the PMOS device 318 includes an n+ bulk (B) region (shownusing vertical lines in FIG. 31, p+ source (S) and drain (D) regions(shown using horizontal lines in FIG. 3), and a gate (G) region (shownusing diagonal lines in FIG. 3) within a n-well region (shown using thesecond gray shading, described above in FIG. 2, in FIG. 3).

Exemplary Intelligent P-Diode

FIG. 4 illustrates a cross-sectional view of an exemplary intelligentp-diode according to an exemplary embodiment of the present disclosure.An intelligent p-diode 400 can be situated within or onto thesemiconductor substrate of a semiconductor layer stack in asubstantially similar manner as the intelligent p-diode 110 as describedabove in FIG. 1. The intelligent p-diode 400 effectively reduces thequantity of carrier holes available within a semiconductor substrate 402to reduce the likelihood of activating one or more parasitic structureswithin other electrical, mechanical, and/or electro-mechanicalcircuitry, such as the electronic circuitry 102, within thesemiconductor substrate 402. This reduction in the quantity of carrierholes within the semiconductor substrate 402 similarly reduces thepotential for latch-up of the other electrical, mechanical, and/orelectro-mechanical circuitry. As illustrated in FIG. 4, the intelligentp-diode 400 includes p-well strap regions 404.1 through 404.m and, diodefinger regions 406.1 through 406.1. The intelligent p-diode 400 can beused to implement the intelligent p-diode 110 as described above.

As illustrated in FIG. 4, the p-well strap regions 04.1 through 404.mand the diode finger regions 406.1 through 406.1 include n+ regions(shown using vertical lines in FIG. 4), p+ regions (shown usinghorizontal lines in FIG. 4), n-well regions (shown using a dottedshading in FIG. 4), p-well regions (shown a partial diagonal shading inFIG. 4), short trench isolation (STI) regions (shown a gray shading inFIG. 4), and silicide regions (shown using white shading in FIG. 4)situated within or onto the semiconductor substrate 402. In theexemplary embodiment illustrated in FIG. 4. the p-well strap regions404.1 through 404.m are interdigitated with the diode finger regions406.1 through 406.1 to form the intelligent p-diode 400. in theexemplary embodiment illustrated in FIG. 4, the p-well strap regions404.1 through 404.m are substantially similar to one another and thediode finger regions 406.1 through 406.1 are substantially similar toone another; therefore, only the n-well strap region 404.1 from amongthe p-well strap regions 404.1 through 404.m and the diode finger region406.1 from among the diode finger regions 406.1 through 406.1 aredescribed in further detail below. For ease of description, the shadingof the various regions of the p-well strap region 404.1 and the diodefinger region 406.1, as described above, are not illustrated in theexploded views of the p-well, strap region 404.1 and the diode fingerregion 406.1. As illustrated in FIG. 4, the p-well strap region 404.1includes p-type hole absorption regions 408.1 through 408.k situated inan p-well region 410. And the diode finger region 406.1 includes ann-type diode finger region 420, a first p-type diode finger region 422.1and, a second p-type diode finger region 422.2 situated in a n-wellregion 434.

The p-well region 410 represents an implanted n-type region within thesemiconductor substrate 402 that includes one or more p-type materials.In an exemplary embodiment, the one or more p-type materials includeimpurity atoms of an acceptor type, such as boron (B), aluminum (Al),gallium (Ga) or any other suitable element, compound, or mixture that iscapable of accepting holes that will be apparent to those skilled in therelevant art(s) without departing from the spirit and scope of thepresent disclosure. Similarly, the n-well region 434 represents animplanted p-type region within the semiconductor substrate 402 thatincludes one or more n-type materials. In an exemplary embodiment, theone or more n-type materials can include impurity atoms of a donor type,such as phosphorus (P), arsenic (As), antimony (Sb), or any othersuitable element, compound, or mixture that is capable of donating holesthat will be apparent to those skilled in the relevant art(s) withoutdeparting from the spirit and scope of the present disclosure.

In the exemplary embodiment illustrated in FIG. 4, the p-type holeabsorption regions 408.1 through 408.k, the first p-type diode fingerregion 422.1, and the second p-type diode finger region 422.2 includep-type regions 412.1 through 412.k, a first p-type region 426.1, and asecond p-type region 426.2, respectively. Although the p-type regions412.1 through 412.k, the p-type region 224, the first p-type region426.1 and the second p-type region 426.2 are illustrated as being inshapes of rectangles in FIG. 4, this is for illustrative purposes only.Those skilled in the relevant art(s) will recognize that other shapes,for example having one or more linear segments and/or curved segments,are possible without departing from the spirit and scope of the presentdisclosure. The p-type inions 412.1 through 412.k, the first p-typeregion 426.1 and the second p-type region 426.2 represent variousregions within the intelligent p-diode 400 which include the p-typematerial. In an exemplary embodiment, the p-type regions 412.1 through412.k, the first p-type region 426.1 and the second p-type region 426.2include a heavy concentration of the p-type material, fir example,approximately

${\frac{1 \times 10^{19}}{{cm}^{3}}\mspace{14mu} {to}\mspace{14mu} \frac{5 \times 10^{20}}{{cm}^{3}}},$

to form P+ regions. In contrast, the n-type diode finger region 420includes an n-type region 424. The n-type region 424 represents a regionwithin the intelligent p-diode 400 which includes the n-type material.In an exemplary embodiment, the n-type region 424 includes a heavyconcentration of the n-type material, for example, approximately

${\frac{1 \times 10^{19}}{{cm}^{3}}\mspace{14mu} {to}\mspace{14mu} \frac{5 \times 10^{20}}{{cm}^{3}}},$

to form a N+ region. In the exemplary embodiment illustrated in FIG. 4,the first p-type region 426.1 and the second p-type region 426.2 form ananode region of the intelligent p-diode 400 and the n-type region 424forms a cathode region of the intelligent p-diode 400.

As to be described in further detail below in FIG. 5, the p-type regions412.1 through 412.k effectively reduce the quantity of carrier holes,such as the carrier holes 158 to provide an example, available withinthe semiconductor substrate 402 to reduce the likelihood of activatingone or more parasitic structures within the other electrical,mechanical, and/or electro-mechanical circuitry coupled to theintelligent p-diode 400, such as the electronic circuitry 102 to providean example. This reduction in the quantity of carrier holes within thesemiconductor substrate 02 similarly reduces the potential for latch-upof the other electrical, mechanical, and/or electro-mechanicalcircuitry.

In the exemplary embodiment illustrated in FIG. 4, the p-type holeabsorption regions 408.1 through 408.k also include the first STIregions 214.1 through 214.k, the second STI regions 216.1 through 216.k,and the silicide regions 218.1 through 218.k as described above in FIG.2. Similarly, the n-type diode finger region 420, the first p-type diodefinger region 422.1, and the second p-type diode finger region 422.include first STI regions 228.1 through 228.3 and second STI regions230.1 through 230.3 as described above in FIG. 2. The n-type diodefinger region 420, the first p-type diode finger region 422.1, and thesecond p-type diode finger region 422.2 also include the silicideregions 232.1 through 232.3 as described above in FIG. 2.

Exemplary Operation of the Exemplary Intelligent P-Diode

FIG. 5 illustrates a cross-sectional view of an, integrated circuithaving an exemplary embodiment of the exemplary intelligent p-diodeaccording to an exemplary embodiment of the present disclosure. Anintegrated circuit 500 can be situated within or onto the semiconductorsubstrate of a semiconductor layer stack in a substantially similarmanner as the integrated circuit 100 as described above in FIG. 1. Inthe exemplary embodiment illustrated in FIG. 5, the integrated circuit500 includes an intelligent pry diode 502 to effectively reduce thequantity of the carrier holes 158 available within the semiconductorsubstrate 402 to reduce the likelihood of activating one or moreparasitic structures within electronic circuitry 504 within thesemiconductor substrate. This reduction in the quantity of carrier holes158 within the semiconductor substrate 402 similarly reduces thepotential for latch-up of the electronic circuitry 504.

As illustrated in FIG. 5. the intelligent p-diode 502 includes p-wellstrap regions 506.1 and 506.2 and a diode finger region 508. Theintelligent p-diode 502 can represent an, exemplary embodiment ofintelligent p-diode 400 as described above in FIG. 4. As such, thep-well strap regions 506.1 and 506.2 can represent exemplary embodimentsof two p-well strap regions from among the p-well strap regions 404.1through 404.m and the diode finger region 508 can represent an exemplaryembodiment of a diode finger region from among the diode finger regions406.1 through 406.1. As to be described below, the p-well strap regions506.1 and 506.2 include the p-type hole absorption regions 408.1 through408.k situated in the p-well region 410 as described above in FIG. 4.And, the diode finger region 508 includes the n-type diode finger region420, the first p-type diode finger region 422.1 and the second p-typediode finger region 422.2 situated in the n-well region 434 as describedabove in FIG. 4.

In the exemplary embodiment illustrated in FIG. 5, the intelligentp-diode 502 dissipates one or more unwanted transient signals, such asthe one or more unwanted transient signals 150 to provide an example,resulting from an electrostatic discharge event, such as theelectrostatic discharge event 152. ideally, the carrier holes 158traverse from the first p-type region 426.1 and the second p-type region426.2 of the diode finger region 508 onto the n-type region 424 of thediode finger region 508. However, as described above in FIG. 1 and FIG.4, some of the carrier holes 158 from among the one or more unwantedtransient signals flow from the intelligent p-diode 502 to thesemiconductor substrate 402 as the intelligent p-diode 502 dissipatesthe one or more unwanted transient signals 150. For example, somecarrier holes from among the carrier holes 158 traverse from the firstp-type region 426.1 and the second p-type region 426.2 of the diodefinger region 508. Onto the electronic circuitry 504 and/or the p-wellstrap regions 506.1 and 506.2 as illustrated in FIG. 5. In the exemplaryembodiment illustrated in FIG. 5, the carrier holes 158 traversing fromthe first p-type region 426.1 and the second p-type region 426.2 of thediode finger region 508 onto the electronic circuitry 504 and/or thep-well strap regions 506.1 and 506.2 are captured by the p-type regions412.1 through 412.k of the p-well strap regions 506.1 and 506.2.However, in some situations, carrier holes 510 from among the carrierholes 158 traversing from the first p-type region 426.1 and the secondp-type region 426.2 of the diode finger region 508 are not captured bythe p-type, regions 412.1 through 412.k of the p-well strap regions506.1 and 506.2 as illustrated in FIG. 5. In these situations, thecarrier hole 510 pass onto the electronic circuitry 504. The quantity ofthe carrier holes 510 passing onto the electronic circuitry 504 isrelated to the number of p-type regions from among the p-type regions412.1 through 412.k of the p-well strap regions 506.1 and 506.2. Forexample, more p-type regions from among the p-type regions 412.1 through412.k of the p-well strap regions 506.1 and 506.2 lead to less carrierholes 510 passing onto the electronic circuitry 504 and less p-typeregions from among the p-type regions 412.1 through 412.k of the p-wellstrap regions 506.1 and 506.2 lead to more carrier holes 510 passingonto the electronic circuitry 504.

In the exemplary embodiment illustrated in FIG. 5, the integratedcircuit 500 includes an STI region 512 situated within a p-well region514 within the semiconductor substrate to isolate the intelligentp-diode 502 from the electronic circuitry 504. In an exemplaryembodiment, the STI region 512 can include substantially similardielectric materials as the first STI regions 414.1 through 414.k andthe second STI regions 416.1 through 416.k as described above in FIG. 4.In another exemplary embodiment, the p-well region 514 can includesubstantially similar p-type materials as the p-well region 410 asdescribed above in FIG. 4.

As Illustrated in FIG. 5, the electronic circuitry 504 includes a p-typemetal oxide semiconductor (PMOS) device 516 and an n-type metal oxidesemiconductor (NMOS) device 718 configured to form a logical invertingcircuit. However, this configuration and arrangement of the electroniccircuitry 504 as shown in FIG. 5 is for illustrative purposes only.Those skilled in the relevant art(s) will recognize other configurationsand arrangements for the electronic circuitry 504 are possible withoutdeparting from the spirit and scope of the present disclosure. Theseother configurations and arrangements can include different NMOS and orPMOS devices than illustrated in FIG. 5. In the exemplary embodimentillustrated in FIG. 5, the PMOS device 516 includes an p+ bulk (B)region (shown using horizontal lines in FIG. 5), n+ source (S) and drain(D) regions (shown using vertical lines in FIG. 5), and a gate (G)region (shown using diagonal lines in FIG. 5) within a p-well region(shown using the third gray shading, described above in FIG. 4, in FIG.5). Likewise, the NMOS device 318 includes an n+ bulk (B) region (shownusing vertical lines in FIG. 5), p+ source (S) and drain (D) regions(shown using horizontal lines in FIG. 5), and a gate (G) region (shownusing diagonal lines in FIG. 5) within a n-well region (shown using thesecond gray shading, described above in FIG. 4).

Exemplary Intelligent Dual Diodes

FIG. 6 illustrates a cross-sectional view of a first exemplaryintelligent dual diode according to an exemplary embodiment of thepresent disclosure. An intelligent dual diode 600 can be situated withinor onto the semiconductor substrate of a semiconductor layer stack in asubstantially similar manner as the intelligent n-diode 108 and theintelligent p-diode 110 as described above in FIG. 1. The intelligentdual diode 600 effectively reduces the quantity of carrier electronsand/or carrier holes available within a semiconductor substrate 602 toreduce the likelihood of activating one or more parasitic structureswithin other electrical, mechanical, and/or electro-mechanicalcircuitry, such as the electronic circuitry 102, within thesemiconductor substrate 602. This reduction in the quantity of carrierelectrons and/or carrier holes within the semiconductor substrate 602similarly reduces the potential for latch-up of the other electrical,mechanical, and/or electro-mechanical circuitry. As illustrated in FIG.6, the intelligent dual diode 600 includes diode finger regions 604.1through 604.b and diode finger regions 606.1 through 606.c. Theintelligent dual diode 600 can be used to implement the intelligentn-diode 108 and the intelligent p-diode 110 as described above.

As illustrated in FIG. 6, the diode finger regions 604.1 through 604.band the diode finger regions 606.1 through 606.c include n+ regions(shown using vertical lines in FIG. 6), p+ regions (shown using,horizontal lines in FIG. 6), n-well regions (shown using a dottedshading in FIG. 6), p-well regions (shown a partial diagonal shading inFIG. 6). short trench isolation (STI) regions (shown a gray shading inFIG. 6), and silicide regions (shown using white shading in FIG. 6)situated within or onto the semiconductor substrate 602. In theexemplary embodiment illustrated in FIG. 6, the diode finger regions604.1 through 604.b are interdigitated with the diode finger regions606.1 through 606.e to form the intelligent dual diode 600. In theexemplary embodiment illustrated in FIG. 6, the diode finger regions604.1 through 604.b are substantially similar to one another and thediode finger regions 606.1 through 606.c are substantially similar toone another; therefore, only the diode finger region 604.1 from amongthe diode finger regions 604.1 through 604.b and the diode finger region606.1 from among the diode finger regions 606.1 through 606.c aredescribed in further detail below. For ease of description, the shadingof the various regions of the diode finger region 604.1 and the diodefinger region 606.1, as described above, are not illustrated in theexploded views of the diode finger region 604.1 and the diode fingerregion 606.1.

As illustrated in FIG. 6, the diode finger region 604.1 can represent anexemplary embodiment of the diode finger region 206.1 as described abovein FIG. 2. In this exemplary embodiment, the diode finger region 604.1includes the p-type diode finger region 220, the first n-type diodefinger region 222.1 and the second n-type diode finger region 222.2situated in the p-well region 234. Each of these regions has beendescribed above in FIG. 2 and will not he described in further detail.Similarly in this exemplary embodiment, the diode finger region 606.1can represent an exemplary embodiment of the diode finger region 406.1as described above in FIG. 4. In this exemplary embodiment, the diodefinger region 606.1 includes the n-type diode finger region 420, thefirst p-type diode finger region 422.1, and the second p-type diodefinger region 422.2 situated in a n-well region 434. Each of theseregions has been described above in FIG. 4 and will not be described infurther detail.

Exemplary Operations of the Exemplary Intelligent P-Diode

FIG. 7 illustrates a first cross-sectional view of an integrated circuithaving an exemplary embodiment of the first exemplary intelligent dualdiode according to an exemplary embodiment of the present disclosure. Anintegrated circuit 700 can be situated within or onto the semiconductorsubstrate of a semiconductor layer stack in a substantially similarmanner as the integrated circuit 100 as described above in FIG. 1. Inthe exemplary embodiment illustrated in FIG. 7, the integrated circuit700 includes an intelligent dual diode 702 to effectively reduce thequantity of the carrier electrons 156 available within the semiconductorsubstrate 602 to reduce the likelihood of activating one or moreparasitic structures within electronic circuitry 704 within thesemiconductor substrate. This reduction in the quantity of carrierelectrons 156 within the semiconductor substrate 602 similarly reducesthe potential for latch-up of the electronic circuitry 704.

As illustrated in FIG. 7, the intelligent dual diode 702 includes diodefinger regions 706.1 and 706.2 and a diode finger region 708. Theintelligent dual diode 702 can represent an exemplary embodiment ofintelligent dual diode 600 as described above in FIG. 6. As such, thediode finger regions 706.1 and 706.2 can represent exemplary embodimentsof two diode finger regions from among the diode finger regions 604.1through 604.b and the diode finger region 708 can represent an exemplaryembodiment of a diode linger region from among the diode finger regions606.1 through 606.c. As to be described below, the diode finger regions706.1 and 706.2 include the p-type diode finger region 220, the firstn-type diode finger region 222.1, and the second n-type diode fingerregion 222.2 situated in the p-well region 234 as described above inFIG. 6. And, the diode finger region 708 includes the n-type diodefinger region 420, the first p-type diode finger region 422.1, and thesecond p-type diode finger region 422.2 situated in the n-well region434 as described above in FIG. 6.

In the exemplary embodiment illustrated in FIG. 7, the intelligent dualdiode 702 dissipates one or more unwanted transient signals, such as theone or more unwanted transient signals 150 to provide an example,resulting from an electrostatic discharge event, such as theelectrostatic discharge event 152. Ideally, the carrier electrons 156traverse from the first p-type diode finger region 422.1 and the secondp-type diode finger region 422.2 of the diode finger region 708 onto then-type diode finger region 420 of the diode finger region 708. However,as described above in FIG. 1 and FIG. 6, some of the carrier electrons156 from among the one or more unwanted transient signals flow from theintelligent dual diode 702 to the semiconductor substrate 602 as theintelligent dual diode 702 dissipates the one or more unwanted transientsignals 150. For example, some carrier electrons from, among the carrierelectrons 156 traverse from the first p-type diode finger region 422.1and the second p-type diode finger region 422.2 of the diode fingerregion 708 onto the electronic circuitry 704 as illustrated in FIG. 7.In the exemplary embodiment illustrated in FIG. 7. the carrier electrons156 traversing from the first p-type diode finger region 422.1 and thesecond p-type diode finger region 4222 of the diode finger region 708onto the electronic circuitry 704 are captured by the p-type diodefinger region 220 of the diode finger regions 706.1 and 706.2. However.in sonic situations, carrier electrons 710 from among the carrierelectrons 156 traversing from the first p-type diode finger region 422.1and the p-type diode finger region 220 of the diode finger regions 706.1and 706.2 as illustrated in FIG. 7. In these situations, the carrierelectrons 710 pass onto the electronic circuitry 704. The quantity ofthe carrier electrons 710 passing onto the, electronic circuitry 704 isrelated to the number of the diode finger regions 706.1 and 706.2. Forexample, more diode finger regions 706.1 and 706.2 lead to less carrierelectrons 710 passing onto the electronic circuitry 704 and less diodefinger regions 706.1 and 706.2 lead to more carrier electrons 710passing onto the electronic circuitry 704.

In the exemplary embodiment illustrated in FIG. 7. the integratedcircuit 700 includes an STI region 712 to isolate the intelligent dualdiode 702 from the electronic circuitry 704. In an exemplary embodiment,the STI region 512 can include substantially similar dielectricmaterials as the first 511 regions 228.1 through 228.3 and the secondSTI regions 230.1 through 230.3 as described above in FIG. 6.

As illustrated. in FIG. 7, the electronic circuitry 704 includes ap-type metal oxide semiconductor (PMOS) device 518 and an n-type metaloxide semiconductor (NMOS) device 718 configured to form a logicalinverting circuit. However, this configuration and arrangement of theelectronic circuitry 704 as shown in FIG. 7 is for illustrative purposesonly. Those skilled in the relevant art(s) will recognize otherconfigurations and arrangements for the electronic circuitry 704 arepossible without departing from the spirit and scope of the presentdisclosure. These other configurations and arrangements can includedifferent NMOS and/or PMOS devices than illustrated in FIG. 7. In theexemplary embodiment illustrated in FIG. 7, the PMOS device 516 includesan p+ bulk (B) region (shown using horizontal lines in FIG. 7), n+source (S) and drain (D) regions (shown using vertical lines in FIG. 7),and a gate (G) region (shown using diagonal lines in FIG. 7) within ap-well region (shown using the third gray shading, described above inFIG. 4, in FIG. 7). Likewise, the NMOS device 318 includes n+ bulk (B)region (shown using vertical lines in FIG. 7), p+ source (S) and drain(D) regions (shown using horizontal lines in FIG. 7), and a gate (G)region (shown using diagonal lines in FIG. 7) within a n-well region(shown using the second gray shading, described above in FIG. 4).

FIG. 8 illustrates a second cross-sectional view of an integratedcircuit having an exemplary embodiment of the first exemplaryintelligent dual diode according to an exemplary embodiment of thepresent disclosure. An integrated circuit 800 can be situated within oronto the semiconductor substrate of a semiconductor layer stack in asubstantially similar manner as the integrated circuit 100 as describedabove in FIG. 1. In the exemplary embodiment illustrated in FIG. 8, theintegrated circuit 800 includes an intelligent dual diode 802 toeffectively reduce the quantity of the carrier holes 158 availablewithin the semiconductor substrate 602 to reduce the likelihood ofactivating one or more parasitic structures within the electroniccircuitry 704 within the semiconductor substrate. This reduction in thequantity of carrier holes 158 within the semiconductor substrate 602similarly reduces the potential for latch-up of the electronic circuitry704.

As illustrated in FIG. 8, the intelligent dual diode 802 includes diodefinger regions 806.1 and 806.2 and a diode finger region 808. Theintelligent dual diode 802 can represent an exemplary embodiment ofintelligent dual diode 600 as described above in FIG. 6. As such, thediode finger regions 806.1 and 806.2 can represent exemplary embodimentsof two diode finger regions from among the diode finger regions 604.1through 604.b and the diode finger region 808 can represent an exemplaryembodiment of a diode finger region from among the diode finger regions606.1 through 606.c. As to be described below, the diode finger regions806.1 and 806.2 include the p-type diode finger region 220, the firstn-type diode finger region 222.1, and the second n-type diode fingerregion 222.2 situated in the p-well region 234 as described above inFIG. 6. And, the diode finger region 808 includes the n-type diodefinger region 420, the first p-type diode finger region 422.1, and thesecond p-type diode finger region 422.2 situated in the n-well region434 as described above in FIG. 6.

In the exemplary embodiment illustrated in FIG. 8, the intelligent dualdiode 802 dissipates one or more unwanted transient signals, such as theone or more unwanted. transient signals 150 to provide an example,resulting from an electrostatic discharge event, such as theelectrostatic discharge event 152. Ideally, the carrier holes 158traverse from the first n-type diode finger region 222.1 and the secondn-type diode finger region 222.2 of the diode finger regions 806.1 and806.2 onto the p-type diode finger region 220 of the diode fingerregions 806.1 and 806.2. However, as described above in FIG. 1 and FIG.6, some of the carrier holes 158 from among the one or more unwantedtransient signals flow from the intelligent dual diode 802 to thesemiconductor substrate 602 as the intelligent dual diode 802 dissipatesthe one or more unwanted transient signals 150. For example, somecarrier electrons from among the carrier holes 158 traverse from thefirst n-type diode ringer region 222.1 and the second n-type diodefinger region 222.2 of the diode finger regions 806.1 and 806.2 onto theelectronic circuitry 704 as illustrated in FIG. 8. In the exemplaryembodiment illustrated in FIG. 8, the carder holes 158 traversing fromthe first n-type diode finger region 222.1 and the second n-type diodefinger region 222.2 of the diode finger regions 806.1 and 806.2 of thediode finger region 808 onto the electronic circuitry 704 are capturedby the n-type diode finger region 420 of the diode finger region 808.However, in sonic situations, carrier holes 810 from among the carrierholes 158 traverse from the first p-type diode finger region 422.1 andthe p-type diode finger region 220 of the diode finger regions 806.1 and806.2 as illustrated in FIG. 8. In these situations, the carrier holes810 pass onto the electronic circuitry 704. The quantity of the carrierholes 810 passim.), onto the electronic circuitry 704 is related to the,number of the diode finger regions 808. For example, more diode fingerregions 808 lead to less carrier holes 810 passing onto the electroniccircuitry 704 and less diode finger regions 808 lead to more carrierholes 810 passing onto the electronic circuitry 704.

Non-Planar Implementations for the Exemplary Intelligent Diodes

Although FIG. 2 through FIG. 8 have been described the intelligentn-diode 200, the intelligent n-diode 302, the intelligent p-diode 400,the intelligent p-diode 502, and the intelligent dual diode 600, theintelligent dual diode 702, and the intelligent dual diode 802 as beingplanar structures, those skilled in the relevant art(s) will recognizethe teachings herein are applicable to other non-planar structures, suchas FinFETs (tin field-effect transistors) to provide an example, withoutdeparting from the spirit and scope of the present disclosure. Forexample, FIG. 9 illustrates a top-down view of a second exemplaryintelligent dual diode according to an exemplary embodiment of thepresent disclosure. An intelligent dual diode 900 can be situated withinor onto the semiconductor substrate of a semiconductor layer stack in asubstantially similar manner as the intelligent n-diode 108 and theintelligent p-diode 110 as described above in FIG. 1. The intelligentdual diode 900 effectively reduces the quantity of carrier electronsand/or carrier holes available within the semiconductor substrate toreduce the likelihood of activating one or more parasitic structureswithin other electrical, mechanical, and/or electro-mechanicalcircuitry, such as the electronic circuitry 102, within thesemiconductor substrate. This reduction in the quantity of carrierelectrons and/or carrier holes within the semiconductor substratesimilarly reduces the potential for latch-up of the other electrical,mechanical, and/or electro-mechanical circuitry. As illustrated in FIG.9, the intelligent dual diode 900 includes diode linger regions 902.1through 902.r and diode finger regions 904.1 through 904.s. Theintelligent dual diode 900 can be used to implement the intelligentn-diode 108 and the intelligent p-diode 110 as described above.

As illustrated in FIG. 9, the diode finger regions 902.1 through 902.rand the diode finger regions 904.1 through 904 .s include n-well regions(shown using a dotted shading in FIG. 2) and p-well regions (shown apartial diagonal shading in FIG. 2) situated within or onto thesemiconductor substrate. In the exemplary embodiment illustrated in FIG.9, the diode finger regions 902.1 through 902.r are interdigitated withthe diode finger regions 904.1 through 904.s to farm the intelligentdual diode 900. In the exemplary embodiment illustrated in FIG. 9, thediode finger regions 902.1 through 902.r are substantially similar toone another and the diode finger regions 904.1 through 904.s aresubstantially similar to one another; therefore, only the diode fingerregion 902.1 from among the diode finger regions 902.1 through 902.r andthe diode finger region 904.1 from among the diode finger regions 904.1through 904.s are described in further detail below.

In the exemplary embodiment illustrated in FIG. 9, the diode fingerregion 902.1 includes a first n-type FinFET 906.1, a second n-typeFinFET 906.2, and a p-type FinFET 908. As illustrated in FIG. 9, thefirst n-type FinFET 906.1 and the second n-type FinFET 906.2 include oneor more fin regions (shown using dashed lines in FIG. 9) and one or moregate regions (shown using diagonal lines in FIG. 9) within an n-wellregion 910 (shown using dotted shading in FIG. 9). Similarly, the p-typeFinFET 908 includes one or more fin regions (shown using dotted lines inFIG. 9) and one or more gate regions within the n-well region 910. Forease of description, the first a-type FinFET 906.1, the second n-typeFinFET 906.2, and the p-type FinFET 908 include one or more sourceregions and one or more drain regions which are not illustrated ire FIG.9.

Additionally, the diode finger region 904.1 includes a first p-typeFinFET 912.1, a second p-type FinFET 912.2, and a n-type FinFET 914 inthe exemplary embodiment illustrated in FIG. 9. As illustrated in FIG.9, the first p-type FinFET 912.1 and the second p-type FinFET 912.2include one or more fin regions and one or more gate regions within anp-well region 916 (shown using gray shading in FIG. 9). Similarly, then-type FinFET 914 includes one or more fin regions and one or more gateregions within the n-well region 910. For ease of description, the firstp-type FinFET 912.1, the second p-type FinFET 912.2, and the n-typeFinFET 914 include one or more source regions and one or more drainregions which are not illustrated in FIG. 9.

CONCLUSION

The foregoing Detailed Description discloses an intelligent diode. Theintelligent diode includes multiple finger regions interdigitated withmultiple strap regions. Each of the multiple linger regions includes: afirst region of a first type as material, a first finger region of thefirst type of material situated in the first well region, and a secondfinger region and a third finger region of a second type of materialdifferent from the first type of material, the second finger region andthe third finger region being situated within the first well region.Each of the multiple strap regions includes a second well region of thesecond type of material, multiple absorption regions of the second typeof material situated in the second well region, and multiple shallowtrench isolation (STI) regions interdigitated with the multipleabsorption regions, the multiple of STI regions being situated withinthe second well region.

The foregoing Detailed Description discloses another intelligent diode.This other intelligent diode includes multiple first diode fingerregions and multiple second diode finger regions interdigitated with themultiple first diode finger regions. Each diode finger region from amongthe multiple first diode finger regions includes: a first well region ofa first type of material, a first finger region of the first type ofmaterial situated in the first well region, a second finger region and athird finger region of a second type of material different from thefirst type of material, the second finger region and the, third lingerregion being situated within the first well region. Each diode fingerregion from among the second multiple diode finger regions including: asecond well region of the second type of material, a fourth fingerregion of the second type of material situated in the first well region,a fifth finger region and a sixth finger region of the first type ofmaterial, the second finger region and the third finger region being,situated within the second well region.

The foregoing. Detailed Description further discloses an integratedcircuit haying a semiconductor substrate and an intelligent diodesituated within or onto, the semiconductor substrate. The intelligentdiode including multiple first regions interdigitated with multiplesecond regions, the multiple second regions being configured to collectcarrier electrons or carrier holes flowing through the semiconductorsubstrate in response to the multiple first regions dissipating atransient signal generated in response to an electrostatic dischargeevent.

The foregoing Detailed Description referred to accompanying figures toillustrate exemplary embodiments consistent with the disclosure.References in the foregoing Detailed Description to “an exemplaryembodiment” indicates that the exemplary embodiment described caninclude a particular feature, structure, or characteristic, but everyexemplary embodiment may not necessarily include the particular feature,structure, or characteristic. Moreover, such phrases are not necessarilyreferring to the same exemplary embodiment. Further, any feature,structure, or characteristic described in connection with an exemplaryembodiment can be included, independently or in any combination, withfeatures, structures, or characteristics of other exemplary embodimentswhether or not explicitly described.

The foregoing Detailed Description is not meant to limiting. Rather, thescope of the disclosure is defined only in accordance with the followingclaims and their equivalents. It is to be appreciated that the foregoingDetailed Description, and not the following Abstract section, isintended to be used to interpret the claims. The Abstract section canset forth one or more, but not all exemplary embodiments, of thedisclosure, and thus, is not intended to limit the disclosure and thefollowing claims and their equivalents in any way.

The exemplary embodiments described within foregoing DetailedDescription have been provided for illustrative purposes, and are notintended to be limiting. Other exemplary embodiments are possible. andmodifications can be made to the exemplary, embodiments while remainingwithin the spirit and scope of the disclosure. The foregoing DetailedDescription has been described with the aid of functional buildingblocks illustrating the implementation of specified functions andrelationships thereof The boundaries of these functional building blockshave been arbitrarily defined herein for the convenience of thedescription. Alternate boundaries can be defined so long as thespecified functions and relationships thereof are appropriatelyperformed.

Embodiments of the disclosure can be implemented in hardware, firmware,software, or any combination thereof Embodiments of the disclosure canalso be implemented as instructions stored on a machine-readable mediumwhich can be read and executed by one or more processors. Amachine-readable medium can include any mechanism for storing ortransmitting information in a form readable by a machine (e.g., acomputing circuitry). For example, a machine-readable medium, caninclude non-transitory machine-readable mediums such as read only memory(ROM) random access memory (RAM); magnetic disk storage media; opticalstorage media; flash memory devices; and others As another example, themachine-readable medium Can include transitory machine-readable mediumsuch as electrical, optical, acoustical, or other forms propagatedsignals (e.g., carrier waves, infrared signals, digital signals, etc.).Further, firmware, software, routines, instructions can be describedherein as performing certain actions. However, it should be appreciatedthat such descriptions are merely for convenience and that such actionsin fact result from computing devices, processors, controllers, or otherdevices executing the firmware, software, routines, instructions, etc.

The foregoing Detailed Description fully revealed the general nature ofthe disclosure that others can, by applying knowledge of those skilledin relevant art(s), readily modify and/or adapt for various applicationssuch exemplary embodiments, without undue experimentation, withoutdeparting; from the spirit and scope of the disclosure. Therefore, suchadaptations and modifications are intended to be within the meaning andplurality of equivalents of the exemplary embodiments based upon theteaching and guidance presented herein. It is to be understood that thephraseology or terminology herein is for the purpose of description andnot of limitation, such that the terminology or phraseology of thepresent specification is to be interpreted by those skilled in relevantart(s) in light only teachings herein.

1. A diode, comprising: a plurality of diode finger regions, each diodefinger region from among the plurality of diode finger regionsincluding: a first well region of a first type of material, a firstfinger region of the first type of material situated in the first wellre in and a second linger region and a third finger region of a secondtype of material different from the first type of material, the secondfinger region and the third finger region being situated within thefirst well region and arranged to be adjacent to the first fingerregion; and a plurality of strap regions interdigitated with theplurality of diode finger regions, each strap region from among theplurality of strap regions including: a second well region of the secondtype of material, a plurality of absorption regions of the second typeof material situated in the second well region, and a plurality ofshallow trench isolation (STI) regions interdigitated with the pluralityof absorption regions, the plurality of STI regions being situatedwithin the second well region.
 2. The diode of claim 1, wherein thefirst type of material comprises: an n-type material, and wherein thesecond type of material comprises: a p-type material.
 3. The diode ofclaim 1, wherein the first type of material comprises: p-type material,and wherein the second type of material comprises: all n-type material.4. The diode of claim 1, wherein each diode finger region from among theplurality of diode finger regions further comprises: a second pluralityof STI regions, wherein a first STI region from among the secondplurality of STI regions separates the first finger region and thesecond finger region and wherein a second STI region from among thesecond plurality of STI regions separates the first finger region andthe third finger region.
 5. The diode of claim 1, wherein the pluralityof diode finger regions is configured to dissipate a transient signalgenerated in response to an electrostatic discharge event.
 6. The diodeof claim 1, wherein the diode is situated within or onto a semiconductorsubstrate, and wherein the plurality of strap regions is configured tocollect carrier electrons or carrier holes flowing through thesemiconductor substrate in response to the diode dissipating a transientsignal generated in response to an electrostatic discharge event.
 7. Adiode, comprising: a first plurality of diode finger regions, each diodefinger region from among the plurality of diode finger regions includinga first well region of a first type of material, a first finger region,of the first type of material situated in the first well region, and asecond finger region and a third finger region of a second type ofmaterial different from the first type of material, the second fingerregion and the third finger region being, situated within the first wellregion and arranged to he adjacent to the first finger region; and asecond plurality of diode finger regions interdigitated with the firstplurality of diode finger regions, each diode finger region from amongthe second plurality of diode finger regions including: a second wellregion of the second type of material, a fourth finger region of thesecond type of material situated in the first well region, and a fifthlinger region and a sixth finger region of the first type of material,the second finger region and the third finger region being situatedwithin the second well region.
 8. The diode of claim 7, wherein thefirst type of material comprises: n-type material, and wherein thesecond type of material comprises: p-type material,
 9. The diode ofclaim 7, wherein the first type of material comprises: a p-typematerial, and wherein the second type of material comprises: are n-typematerial.
 10. The diode of claim 7, wherein each diode finger regionfrom among the first plurality of diode finger regions furthercomprises: a plurality of shallow trench isolation (STI) regions,wherein a first STI region from among the plurality of STI regionsseparates the first finger region and the second finger region, andwherein a second STI region from among the plurality of STI regionsseparates the first finger region and the third finger region.
 11. Thediode of claim 7, wherein each diode finger region from among the secondplurality of diode finger regions further comprises: a plurality ofshallow trench isolation (STI) regions, wherein a first STI region fromamong the plurality of STI regions separates the fourth finger regionand the fifth finger region, and Wherein a second STI region from amongthe plurality of STI regions separates the fourth finger region and thesixth finger region.
 12. The diode of claim 7, wherein the firstplurality of diode finger regions and the second plurality of diodefinger regions are configured to dissipate a transient signal generatedin response to an electrostatic discharge event.
 13. The diode of claim7, wherein the diode is situated within or onto a semiconductorsubstrate, and wherein the first plurality of diode linger regions isconfigured to collect carrier electrons or carrier holes flowing throughthe semiconductor substrate in response to the second plurality of diodefinger regions dissipating a transient signal generated in response toan electrostatic discharge event, and wherein the second plurality ofdiode, finger regions is configured to collect carrier electrons orcarrier holes flowing through the semiconductor substrate in response tothe first plurality of diode finger regions dissipating the transientsignal.
 14. An integrated circuit, comprising a semiconductor substrate;and an diode situated within or onto the semiconductor substrate, thediode including a first plurality of regions interdigitated with asecond plurality of regions, the second plurality of regions beingconfigured to collect carrier electrons or carrier holes flowing throughthe semiconductor substrate in response to the first plurality ofregions dissipating a transient signal generated in response to anelectrostatic discharge event.
 15. The integrated circuit of claim 14,wherein the first plurality of regions comprise: a plurality of diodefinger regions, each diode finger region from among the plurality ofdiode finger regions including: a first well region of a first type ofmaterial, a first finger region of the first type of material situatedin the first well region, and a second finger region and a third lingerregion of a second type of material different from the first type ofmaterial, the second finger region and the third finger region beingsituated within the first well region.
 16. The integrated circuit ofclaim 15, wherein the first type of material comprises: an n-typematerial, and wherein the second type of material comprises: p-typematerial.
 17. The integrated circuit of claim 15, wherein the first typeof material comprises: a p-type material, and wherein the second type ofmaterial comprises: an n-type material.
 18. The integrated circuit ofclaim 14, wherein the second plurality of regions comprise: a firstplurality of diode finger regions, each diode finger region from amongthe plurality of diode finger regions including; a first well region ofa first type of material, a first finger region of the first type ofmaterial situated in the first well region, a second finger region and athird finger region of a second type of material different from thefirst type of material, the second finger region. and the third fingerregion being situated within the first well region.
 19. The integratedcircuit of claim 18, wherein the first type of material comprises: ann-type material, and wherein the second type of material comprises:p-type material.
 20. The integrated circuit of claim 18, wherein thefirst type of material comprises: as p-type material, and wherein thesecond type of material comprises: an n-type material.